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takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-4000C16-8GTZRA 8GB

takeMS International AG TMS2GB264D082-805G 2GB vs G Skill Intl F4-4000C16-8GTZRA 8GB

总分
star star star star star
takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分
star star star star star
G Skill Intl F4-4000C16-8GTZRA 8GB

G Skill Intl F4-4000C16-8GTZRA 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D082-805G 2GB 需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 22.4
    测试中的平均数值
G Skill Intl F4-4000C16-8GTZRA 8GB 需要考虑的原因
G Skill Intl F4-4000C16-8GTZRA 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 46
    左右 -119% 更低的延时
  • 更快的写入速度，GB/s
    19.1 left arrow 1,852.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-4000C16-8GTZRA 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 21
  • 读取速度，GB/s
    5,535.6 left arrow 22.4
  • 写入速度，GB/s
    1,852.4 left arrow 19.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    858 left arrow 4251

takeMS International AG TMS2GB264D082-805G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB

G Skill Intl F4-4000C16-8GTZRA 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Corsair CMD16GX4M2B3000C15 8GB
Corsair CMD16GX4M2B3000C15 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMWX16GC3000C16W4D 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-2666C18-8GRS 8GB
G Skill Intl F4-2666C18-8GRS 8GB
内存RAM
Corsair CMY8GX3M2A2133C8 4GB
Corsair CMY8GX3M2A2133C8 4GB
G Skill Intl F4-3200C14-8GTRG 8GB
G Skill Intl F4-3200C14-8GTRG 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Kingston 9965662-010.A00G 16GB
Kingston 9965662-010.A00G 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
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Corsair CMSX64GX4M4A2400C16 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingston KTD3KX-HYA 8GB
Kingston KTD3KX-HYA 8GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Corsair CMK32GX4M2Z2400C16 16GB
Corsair CMK32GX4M2Z2400C16 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
Kingston 9905712-001.B00G 16GB
Kingston 9905712-001.B00G 16GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-2133C15-8GNS 8GB
G Skill Intl F4-2133C15-8GNS 8GB
内存RAM