takeMS International AG TMS2GB264D082-805G 2GB vs Kingston 8ATF1G64HZ-2G3B2 8GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Kingston 8ATF1G64HZ-2G3B2 8GB

Kingston 8ATF1G64HZ-2G3B2 8GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 107

左右 57% 更低的延时

Kingston 8ATF1G64HZ-2G3B2 8GB

需要考虑的原因
Kingston 8ATF1G64HZ-2G3B2 8GB

报告一个错误

更快的读取速度，GB/s

8.5 5

测试中的平均数值
更快的写入速度，GB/s

4.7 1,852.4

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Kingston 8ATF1G64HZ-2G3B2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 107
读取速度，GB/s

5,535.6 8.5
写入速度，GB/s

1,852.4 4.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 1022

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT351S6BFR8C-H9 4GB

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Chun Well Technology Holding Limited ND4U1636181DRLDE 1

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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Corsair CMK8GX4M2A2666C16 4GB

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Kingston 99U5584-005.A00LF 4GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology 78.D2GG7.AU30B 16GB

Apacer Technology 78.D2GG7.AU30B 16GB

Kingston 9905402-665.A00LF 4GB

Kingston 9905402-665.A00LF 4GB

G Skill Intl F4-3200C15-8GVR 8GB

G Skill Intl F4-3200C15-8GVR 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Maxsun MSD44G24Q3 4GB

Maxsun MSD44G24Q3 4GB