takeMS International AG TMS2GB264D082-805G 2GB vs Kingston 9905713-019.A00G 4GB

总分

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分

Kingston 9905713-019.A00G 4GB

Kingston 9905713-019.A00G 4GB

差异规格评论

差异

takeMS International AG TMS2GB264D082-805G 2GB

需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB

报告一个错误

更快的读取速度，GB/s

5 16.3

测试中的平均数值

Kingston 9905713-019.A00G 4GB

需要考虑的原因
Kingston 9905713-019.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 46

左右 -21% 更低的延时
更快的写入速度，GB/s

11.5 1,852.4

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

takeMS International AG TMS2GB264D082-805G 2GB

Kingston 9905713-019.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 38
读取速度，GB/s

5,535.6 16.3
写入速度，GB/s

1,852.4 11.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

858 3332

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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Kingston 9905713-019.A00G 4GB

Samsung M471B5173DB0-YK0 4GB

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EVGA 16G-D4-2666-MR 4GB

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Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

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Samsung M3 78T5663RZ3-CF7 2GB

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Micron Technology 36ASF4G72LZ-2G3B1 32GB

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Kingston 9965525-155.A00LF 8GB

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G Skill Intl F4-3000C15-8GVRB 8GB

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Crucial Technology BLS4G4S240FSD.M8FADM 4GB

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Ramaxel Technology RMR5040ED58E9W1600 4GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

Crucial Technology CT8G4SFS632A.C4FE 8GB