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takeMS International AG TMS2GB264D082-805G 2GB
Kllisre D4 8G 8GB

takeMS International AG TMS2GB264D082-805G 2GB vs Kllisre D4 8G 8GB

总分
star star star star star
takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

总分
star star star star star
Kllisre D4 8G 8GB

Kllisre D4 8G 8GB

差异 规格 评论

差异

takeMS International AG TMS2GB264D082-805G 2GB 需要考虑的原因
takeMS International AG TMS2GB264D082-805G 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    46 left arrow 47
    左右 2% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 11.7
    测试中的平均数值
Kllisre D4 8G 8GB 需要考虑的原因
Kllisre D4 8G 8GB
报告一个错误
  • 更快的写入速度，GB/s
    6.7 left arrow 1,852.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
takeMS International AG TMS2GB264D082-805G 2GB
Kllisre D4 8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 47
  • 读取速度，GB/s
    5,535.6 left arrow 11.7
  • 写入速度，GB/s
    1,852.4 left arrow 6.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    858 left arrow 2143

takeMS International AG TMS2GB264D082-805G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8KU5 2GB
Apacer Technology GD2.0918CT.001 4GB

Kllisre D4 8G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-3000C14-16GTZ 16GB
G Skill Intl F4-3000C14-16GTZ 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kllisre D4 8G 8GB
Kllisre D4 8G 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
V-GEN D4H8GL26A8TS6 8GB
V-GEN D4H8GL26A8TS6 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Transcend Information TS512MSH64V4H 4GB
Transcend Information TS512MSH64V4H 4GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
内存RAM
Kingston 99U5471-020.A00LF 4GB
Kingston 99U5471-020.A00LF 4GB
Kingston 9965662-019.A00G 32GB
Kingston 9965662-019.A00G 32GB
内存RAM
SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
G Skill Intl F4-4000C16-8GTZR 8GB
G Skill Intl F4-4000C16-8GTZR 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
Crucial Technology CT8G4SFS8266.M8FE 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-3600C16-8GTZ 8GB
G Skill Intl F4-3600C16-8GTZ 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BL16G32C16S4B.8FB 16GB
Crucial Technology BL16G32C16S4B.8FB 16GB
内存RAM