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Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-3600C18-8GTZR 8GB

Team Group Inc. Team-Elite-1333 4GB vs G Skill Intl F4-3600C18-8GTZR 8GB

总分
star star star star star
Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

总分
star star star star star
G Skill Intl F4-3600C18-8GTZR 8GB

G Skill Intl F4-3600C18-8GTZR 8GB

差异 规格 评论

差异

Team Group Inc. Team-Elite-1333 4GB 需要考虑的原因
Team Group Inc. Team-Elite-1333 4GB
报告一个错误
G Skill Intl F4-3600C18-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-3600C18-8GTZR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 41
    左右 -41% 更低的延时
  • 更快的读取速度，GB/s
    19.3 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.0 left arrow 7.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-3600C18-8GTZR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 29
  • 读取速度，GB/s
    12.9 left arrow 19.3
  • 写入速度，GB/s
    7.7 left arrow 16.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2028 left arrow 3687

Team Group Inc. Team-Elite-1333 4GB RAM的比较

Kingston 99U5402-052.A00G 4GB
Corsair CMK8GX4M2B4266C19 4GB

G Skill Intl F4-3600C18-8GTZR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-3600C18-8GTZR 8GB
G Skill Intl F4-3600C18-8GTZR 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4400C19-32GTZR 32GB
G Skill Intl F4-4400C19-32GTZR 32GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Kingston KHX3000C16/16GX 16GB
Kingston KHX3000C16/16GX 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
Patriot Memory (PDP Systems) 2400 C16 Series 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston KHX3200C16D4/4GX 4GB
Kingston KHX3200C16D4/4GX 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
V-GEN D4S4GL32A16TS 4GB
V-GEN D4S4GL32A16TS 4GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Essencore Limited KD48GU880-34A170X 8GB
Essencore Limited KD48GU880-34A170X 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Corsair CMK16GX4M4C3200C16 4GB
Corsair CMK16GX4M4C3200C16 4GB
内存RAM
Kingston 99U5584-010.A00LF 4GB
Kingston 99U5584-010.A00LF 4GB
Samsung M391A2K43BB1-CPB 16GB
Samsung M391A2K43BB1-CPB 16GB
内存RAM