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Team Group Inc. Team-Value-800 2GB
Kingston CBD24D4S7S8MB-8 8GB

Team Group Inc. Team-Value-800 2GB vs Kingston CBD24D4S7S8MB-8 8GB

总分
star star star star star
Team Group Inc. Team-Value-800 2GB

Team Group Inc. Team-Value-800 2GB

总分
star star star star star
Kingston CBD24D4S7S8MB-8 8GB

Kingston CBD24D4S7S8MB-8 8GB

差异 规格 评论

差异

Team Group Inc. Team-Value-800 2GB 需要考虑的原因
Team Group Inc. Team-Value-800 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.7
    测试中的平均数值
Kingston CBD24D4S7S8MB-8 8GB 需要考虑的原因
Kingston CBD24D4S7S8MB-8 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 54
    左右 -59% 更低的延时
  • 更快的写入速度，GB/s
    10.2 left arrow 1,952.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Team Group Inc. Team-Value-800 2GB
Kingston CBD24D4S7S8MB-8 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 34
  • 读取速度，GB/s
    4,586.7 left arrow 13.7
  • 写入速度，GB/s
    1,952.2 left arrow 10.2
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    704 left arrow 2337

Team Group Inc. Team-Value-800 2GB RAM的比较

Corsair VS2GB800D2 2GB
G Skill Intl F4-4266C19-8GTZSW 8GB

Kingston CBD24D4S7S8MB-8 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Team Group Inc. Team-Value-800 2GB
Team Group Inc. Team-Value-800 2GB
Kingston CBD24D4S7S8MB-8 8GB
Kingston CBD24D4S7S8MB-8 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
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Crucial Technology CT4G4SFS8266.M8FE 4GB
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Essencore Limited IM4AGS88N26-GIIHA0 16GB
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内存RAM
Samsung M393B2G70AH0-YH9 16GB
Samsung M393B2G70AH0-YH9 16GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
Micron Technology 36ASF4G72LZ-2G3A1 32GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
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GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB
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Kllisre KRE-D3U1600M/8G 8GB
Kllisre KRE-D3U1600M/8G 8GB
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Kingston 9965600-027.A00G 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK16GX4M2F4500C19 8GB
Corsair CMK16GX4M2F4500C19 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Corsair CM4B8G4J2400A16K2-ON 8GB
Corsair CM4B8G4J2400A16K2-ON 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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Crucial Technology BL16G32C16U4RL.M16FE 16GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
SK Hynix HMA851S6JJR6N-VK 4GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
内存RAM