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Team Group Inc. UD5-6400 16GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB

Team Group Inc. UD5-6400 16GB vs Crucial Technology BLS4G4D26BFSC.8FE 4GB

总分
star star star star star
Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSC.8FE 4GB

Crucial Technology BLS4G4D26BFSC.8FE 4GB

差异 规格 评论

差异

Team Group Inc. UD5-6400 16GB 需要考虑的原因
Team Group Inc. UD5-6400 16GB
报告一个错误
Crucial Technology BLS4G4D26BFSC.8FE 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 21
    左右 -11% 更低的延时
  • 更快的读取速度，GB/s
    18.8 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.3 left arrow 13.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
Team Group Inc. UD5-6400 16GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 19
  • 读取速度，GB/s
    15.0 left arrow 18.8
  • 写入速度，GB/s
    13.9 left arrow 14.3
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 24 26 28 30 32 34 36 38 40 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    no data / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3774 left arrow 2991

Team Group Inc. UD5-6400 16GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
G Skill Intl F4-4400C16-8GTRS 8GB

Crucial Technology BLS4G4D26BFSC.8FE 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3600C14-16GTZR 16GB
G Skill Intl F4-3600C14-16GTZR 16GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
Crucial Technology CT4G4DFS8213.8FA11 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2666 8GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
G Skill Intl F4-2666C18-32GTZN 32GB
G Skill Intl F4-2666C18-32GTZN 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston CBD26D4U9S8MH-8 8GB
Kingston CBD26D4U9S8MH-8 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Samsung M393A2K43DB3-CWE 16GB
Samsung M393A2K43DB3-CWE 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Corsair CMV16GX4M1L2400C16 16GB
Corsair CMV16GX4M1L2400C16 16GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-040.A00LF 8GB
Kingston 99U5471-040.A00LF 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Corsair CMK64GX4M4B3466C16 16GB
Corsair CMK64GX4M4B3466C16 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Samsung M471A1G43DB0-0-B 8GB
Samsung M471A1G43DB0-0-B 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Kingston KV0M5R-MIE 8GB
Kingston KV0M5R-MIE 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3200C14-8GVR 8GB
G Skill Intl F4-3200C14-8GVR 8GB
内存RAM