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Team Group Inc. Vulcan-1600 4GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Team Group Inc. Vulcan-1600 4GB vs Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

总分
star star star star star
Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

差异 规格 评论

差异

Team Group Inc. Vulcan-1600 4GB 需要考虑的原因
Team Group Inc. Vulcan-1600 4GB
报告一个错误
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 39
    左右 -44% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 14.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Team Group Inc. Vulcan-1600 4GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 27
  • 读取速度，GB/s
    14.3 left arrow 15.6
  • 写入速度，GB/s
    8.7 left arrow 13.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2376 left arrow 2964

Team Group Inc. Vulcan-1600 4GB RAM的比较

PNY Electronics 4GBH1X04F1AA28-15 4GB
Kingston KYXC0V-MIB 16GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB RAM的比较

Corsair CM5S16GM4800A40K2 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
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Elpida EBJ10UE8BAFA-AE-E 1GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
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SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-3466C16-8GTZ 8GB
G Skill Intl F4-3466C16-8GTZ 8GB
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Crucial Technology CT4G4SFS8266.M8FE 4GB
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Kingston ACR256X64D3S1333C9 2GB
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Kingston 9905625-098.A00G 16GB
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
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G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
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Crucial Technology BLS4G4D240FSB.8FBD2 4GB
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G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
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Micron Technology 18ASF1G72AZ-2G1A1 8GB
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Samsung M471A1K43CB1-CTD 8GB
内存RAM
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Kingston KHX1600C9D3/4GX 4GB
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Samsung M378A4G43MB1-CTD 32GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
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Corsair CMSX64GX4M4A2400C16 16GB
内存RAM
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Elpida EBJ40EG8BFWB-JS-F 4GB
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Kingston XCCT36-MIE 16GB
内存RAM
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Lexar Co Limited LD4AU016G-H3200GST 16GB
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