Transcend Information TS512MSK64W6H 4GB vs Micron Technology 16ATF2G64HZ-2G3A1 16GB

总分

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

总分

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

差异规格评论

差异

Transcend Information TS512MSK64W6H 4GB

需要考虑的原因
Transcend Information TS512MSK64W6H 4GB

报告一个错误

低于PassMark测试中的延时，ns

29 39

左右 26% 更低的延时
更快的读取速度，GB/s

12.1 11.5

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G3A1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3A1 16GB

报告一个错误

更快的写入速度，GB/s

9.1 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Transcend Information TS512MSK64W6H 4GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 39
读取速度，GB/s

12.1 11.5
写入速度，GB/s

8.0 9.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1989 1881

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Kllisre KRE-D3S1600M/8G 8GB

Kllisre KRE-D3S1600M/8G 8GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

Transcend Information TS512MSK64W6H 4GB

Transcend Information TS512MSK64W6H 4GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Micron Technology 16ATF2G64HZ-2G3A1 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Crucial Technology CT8G4SFD8213.C16FBR2 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Apacer Technology GD2.2229BH.001 16GB

Apacer Technology GD2.2229BH.001 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3600C19-8GVRB 8GB

G Skill Intl F4-3600C19-8GVRB 8GB

Crucial Technology CT102464BF160B.16F 8GB

Crucial Technology CT102464BF160B.16F 8GB

Corsair CM4X16GE2666Z16K4 16GB

Corsair CM4X16GE2666Z16K4 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Lexar Co Limited LD4AS008G-H2666GST 8GB

Lexar Co Limited LD4AS008G-H2666GST 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Ramaxel Technology RMUA5120ME86H9F-2666 4GB

Ramaxel Technology RMUA5120ME86H9F-2666 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMK16GX4M4A2400C16 4GB

Corsair CMK16GX4M4A2400C16 4GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

G Skill Intl F4-3200C16-8GVSB 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB