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TwinMOS 8DPT5MK8-TATP 2GB
Avant Technology W641GU48J7240ND 8GB

TwinMOS 8DPT5MK8-TATP 2GB vs Avant Technology W641GU48J7240ND 8GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
Avant Technology W641GU48J7240ND 8GB

Avant Technology W641GU48J7240ND 8GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.5
    测试中的平均数值
Avant Technology W641GU48J7240ND 8GB 需要考虑的原因
Avant Technology W641GU48J7240ND 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 53
    左右 -66% 更低的延时
  • 更快的写入速度，GB/s
    12.7 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Avant Technology W641GU48J7240ND 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 32
  • 读取速度，GB/s
    3,726.4 left arrow 16.5
  • 写入速度，GB/s
    1,590.1 left arrow 12.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    522 left arrow 2713

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Avant Technology W641GU48J7240ND 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-2800C16-8GRR 8GB
G Skill Intl F4-2800C16-8GRR 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Avant Technology W641GU48J7240ND 8GB
Avant Technology W641GU48J7240ND 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.C8F 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905630-066.A00G 16GB
Kingston 9905630-066.A00G 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
Memphis Electronic D4SO1G724GI-A58SD 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston KHX3000C16/16GX 16GB
Kingston KHX3000C16/16GX 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KH2400C15D4/8 8GB
Kingston KH2400C15D4/8 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Essencore Limited KD44GU480-26N160T 4GB
Essencore Limited KD44GU480-26N160T 4GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
G Skill Intl F4-3200C16-16GTRG 16GB
G Skill Intl F4-3200C16-16GTRG 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Corsair CMU32GX4M4C3000C16 8GB
Corsair CMU32GX4M4C3000C16 8GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
Patriot Memory (PDP Systems) PSD44G266681 4GB
内存RAM