TwinMOS 8DPT5MK8-TATP 2GB vs Corsair CM4X8GE2666C16K8 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Corsair CM4X8GE2666C16K8 8GB

Corsair CM4X8GE2666C16K8 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.3

测试中的平均数值

Corsair CM4X8GE2666C16K8 8GB

需要考虑的原因
Corsair CM4X8GE2666C16K8 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 53

左右 -56% 更低的延时
更快的写入速度，GB/s

11.0 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CM4X8GE2666C16K8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 34
读取速度，GB/s

3,726.4 15.3
写入速度，GB/s

1,590.1 11.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3041

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C16-8GTRG 8GB

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Corsair CMSX4GX3M1A1600C9 4GB

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Netac Technology Co Ltd EKBLACK4083016A 8GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-2800C16-4GRR 4GB

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Samsung M393B2G70BH0-CK0 16GB

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G Skill Intl F4-4000C16-16GVKA 16GB

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Crucial Technology CT4G4DFS8213.C8FBD1 4GB

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Heoriady HX2666CX15D4/4G 4GB

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Samsung M471B5673FH0-CH9 2GB

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Corsair CM2X1024-8500C5D 1GB

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G Skill Intl F4-3000C15-16GVR 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

SK Hynix HMA82GU6CJR8N-XN 16GB

SK Hynix HMA82GU6CJR8N-XN 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Corsair CMK32GX4M4D3600C18 8GB

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Kingston 99U5403-465.A00LF 8GB

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Corsair CMK128GX4M4A2400C16 32GB