TwinMOS 8DPT5MK8-TATP 2GB vs Corsair CMD64GX4M8B2800C14 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Corsair CMD64GX4M8B2800C14 8GB

Corsair CMD64GX4M8B2800C14 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 14.4

测试中的平均数值

Corsair CMD64GX4M8B2800C14 8GB

需要考虑的原因
Corsair CMD64GX4M8B2800C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 53

左右 -104% 更低的延时
更快的写入速度，GB/s

11.0 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMD64GX4M8B2800C14 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 26
读取速度，GB/s

3,726.4 14.4
写入速度，GB/s

1,590.1 11.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3078

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M4 70T2953EZ3-CE6 1GB

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Kingston KHX1600C9D3/8G 8GB

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InnoDisk Corporation M4S0-4GSSNCSJ 4GB

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Samsung M471B5273CH0-CH9 4GB

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Chun Well Technology Holding Limited D4U0832160B 8GB

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Kingston 9905471-002.A00LF 2GB

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Transcend Information TS2GSH64V4B 16GB

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Kingston 99U5403-465.A00LF 8GB

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Kingston KKN2NM-MIE 4GB

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Micron Technology 36ASF4G72LZ-2G3B1 32GB

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Crucial Technology BLS4G4D26BFSC.8FD2 4GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N-VK 16GB

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SK Hynix HMT41GS6BFR8A-PB 8GB

Transcend Information JM2666HSB-16G 16GB

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Samsung M393A1G40DB0-CPB 8GB

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Golden Empire CL14-16-16 D4-3000 4GB

Golden Empire CL14-16-16 D4-3000 4GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

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