TwinMOS 8DPT5MK8-TATP 2GB vs Corsair CMK64GX4M4B3333C16 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Corsair CMK64GX4M4B3333C16 16GB

Corsair CMK64GX4M4B3333C16 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.6

测试中的平均数值

Corsair CMK64GX4M4B3333C16 16GB

需要考虑的原因
Corsair CMK64GX4M4B3333C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 53

左右 -61% 更低的延时
更快的写入速度，GB/s

12.8 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMK64GX4M4B3333C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 33
读取速度，GB/s

3,726.4 15.6
写入速度，GB/s

1,590.1 12.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3370

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5773DH0-CH9 2GB

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Corsair CM2X1024-6400C4 1GB

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Kingston 9965640-004.C00G 16GB

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Samsung M378B5273DH0-CH9 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9905598-006.A00G 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingston 9905668-001.A00G 8GB

Kingston 9905668-001.A00G 8GB