TwinMOS 8DPT5MK8-TATP 2GB vs Corsair CMW64GX4M4E3200C16 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Corsair CMW64GX4M4E3200C16 16GB

Corsair CMW64GX4M4E3200C16 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 18.4

测试中的平均数值

Corsair CMW64GX4M4E3200C16 16GB

需要考虑的原因
Corsair CMW64GX4M4E3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 53

左右 -83% 更低的延时
更快的写入速度，GB/s

15.1 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMW64GX4M4E3200C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 29
读取速度，GB/s

3,726.4 18.4
写入速度，GB/s

1,590.1 15.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3723

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Kingston 99U5700-014.A00G 8GB

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Kingston 99U5584-001.A00LF 4GB

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Corsair CMK32GX4M4A2133C15 8GB

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Kingston 99U5403-036.A00G 4GB

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Corsair CMK32GX4M4D3200C16 8GB

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PUSKILL DDR3 1600 8G 8GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3200C16-4GVKB 4GB

G Skill Intl F4-3200C16-4GVKB 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CMK16GX4M2C3333C16 8GB

Corsair CMK16GX4M2C3333C16 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

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Dust Leopard DDR4-2400 C17 8GB 8GB