TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology BL16G32C16U4WL.M16FE 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Crucial Technology BL16G32C16U4WL.M16FE 16GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 20.6

测试中的平均数值

Crucial Technology BL16G32C16U4WL.M16FE 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4WL.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 53

左右 -83% 更低的延时
更快的写入速度，GB/s

17.5 1,590.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 29
读取速度，GB/s

3,726.4 20.6
写入速度，GB/s

1,590.1 17.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

522 3936

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology BL16G32C16U4WL.M16FE 16GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Micron Technology 8ATF1G64AZ-2G3A1 8GB

Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB

Crucial Technology BL8G32C16U4BL.M8FE1 8GB