TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 18.8

测试中的平均数值

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

需要考虑的原因
Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 53

左右 -104% 更低的延时
更快的写入速度，GB/s

15.6 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 26
读取速度，GB/s

3,726.4 18.8
写入速度，GB/s

1,590.1 15.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 3733

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMW64GX4M2D3000C16 32GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Samsung M386B4G70DM0-CMA4 32GB

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Crucial Technology CT16G4SFD824A.C16FJ 16GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Essencore Limited KD48GS88J-26N1900 8GB

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Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB

Micron Technology 9ASF1G72AZ-2G3B1 8GB