TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology CT8G4SFS6266.M4FB 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Crucial Technology CT8G4SFS6266.M4FB 8GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.1

测试中的平均数值

Crucial Technology CT8G4SFS6266.M4FB 8GB

需要考虑的原因
Crucial Technology CT8G4SFS6266.M4FB 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 53

左右 -47% 更低的延时
更快的写入速度，GB/s

12.6 1,590.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CT8G4SFS6266.M4FB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 36
读取速度，GB/s

3,726.4 17.1
写入速度，GB/s

1,590.1 12.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

522 2920

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMU32GX4M2A2400C14 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

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Crucial Technology CT8G4DFD8213.C16FBR2 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Samsung M392A4K40BM0-CRC 32GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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AMD R5S38G1601U2S 8GB

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Nanya Technology NT8GA64D88CX3S-JR 8GB