TwinMOS 8DPT5MK8-TATP 2GB vs Crucial Technology CT8G4SFS8266.M8FD 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Crucial Technology CT8G4SFS8266.M8FD 8GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.2

测试中的平均数值

Crucial Technology CT8G4SFS8266.M8FD 8GB

需要考虑的原因
Crucial Technology CT8G4SFS8266.M8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 53

左右 -51% 更低的延时
更快的写入速度，GB/s

10.9 1,590.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 35
读取速度，GB/s

3,726.4 15.2
写入速度，GB/s

1,590.1 10.9
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

522 2571

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR256X64D3S1333C9 2GB

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SK Hynix HMT41GU7BFR8C-RD 8GB

SK Hynix HMT41GU7BFR8C-RD 8GB

G Skill Intl F4-2800C18-16GRS 16GB

G Skill Intl F4-2800C18-16GRS 16GB

Crucial Technology BLS8G4D240FSC.16FBD 8GB

Crucial Technology BLS8G4D240FSC.16FBD 8GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

G Skill Intl F4-3200C16-4GRK 4GB

G Skill Intl F4-3200C16-4GRK 4GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston KHX2666C16S4/32G 32GB

Kingston KHX2666C16S4/32G 32GB