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TwinMOS 8DPT5MK8-TATP 2GB
Essencore Limited KD48GU88C-26N1600 8GB
比较
TwinMOS 8DPT5MK8-TATP 2GB vs Essencore Limited KD48GU88C-26N1600 8GB
总分
TwinMOS 8DPT5MK8-TATP 2GB
总分
Essencore Limited KD48GU88C-26N1600 8GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
更快的读取速度,GB/s
3
20.5
测试中的平均数值
需要考虑的原因
Essencore Limited KD48GU88C-26N1600 8GB
报告一个错误
低于PassMark测试中的延时,ns
18
53
左右 -194% 更低的延时
更快的写入速度,GB/s
16.4
1,590.1
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Essencore Limited KD48GU88C-26N1600 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
53
18
读取速度,GB/s
3,726.4
20.5
写入速度,GB/s
1,590.1
16.4
内存带宽,mbps
6400
21300
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
522
3530
TwinMOS 8DPT5MK8-TATP 2GB RAM的比较
Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB
Essencore Limited KD48GU88C-26N1600 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-515.A00LF 8GB
Crucial Technology CT8G4DFS824A.M8FGM 8GB
Samsung M393B2G70BH0-CK0 16GB
Terabyte Co Ltd RCX2-16G3000R 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMR32GX4M2D3000C16 16GB
Samsung M393A4K40BB1-CRC 32GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
Kingston 9965516-430.A00G 16GB
G Skill Intl F4-2133C15-8GNT 8GB
Samsung M471B1G73QH0-YK0 8GB
Kingston 9965669-031.A00G 16GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2400C15-8GRK 8GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 3000 C16 Series 4GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Samsung M378A1K43EB2-CWE 8GB
Avant Technology J642GU42J7240NF 16GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
报告一个错误
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Bug description
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