TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-3866C18-4GVK 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

G Skill Intl F4-3866C18-4GVK 4GB

G Skill Intl F4-3866C18-4GVK 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 19.2

测试中的平均数值

G Skill Intl F4-3866C18-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3866C18-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 53

左右 -179% 更低的延时
更快的写入速度，GB/s

13.5 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3866C18-4GVK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 19
读取速度，GB/s

3,726.4 19.2
写入速度，GB/s

1,590.1 13.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT42GR7AFR4A-PB 16GB

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G Skill Intl F4-3000C15-4GRR 4GB

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Kingston 9905471-001.A01LF 2GB

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Samsung M471A5244CB0-CTD 4GB

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Apacer Technology 78.01G86.9H50C 1GB

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Kingston X5H5PW-MIE 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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G Skill Intl F4-2133C15-8GRB 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CMD16GX4M2A2666C15 8GB

Corsair CMD16GX4M2A2666C15 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

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Crucial Technology CT8G4DFD8213.C16FHP 8GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

G Skill Intl F4-3333C16-8GVK 8GB

G Skill Intl F4-3333C16-8GVK 8GB