TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-4000C17-16GTRGB 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

G Skill Intl F4-4000C17-16GTRGB 16GB

G Skill Intl F4-4000C17-16GTRGB 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.6

测试中的平均数值

G Skill Intl F4-4000C17-16GTRGB 16GB

需要考虑的原因
G Skill Intl F4-4000C17-16GTRGB 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 53

左右 -56% 更低的延时
更快的写入速度，GB/s

14.9 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-4000C17-16GTRGB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 34
读取速度，GB/s

3,726.4 15.6
写入速度，GB/s

1,590.1 14.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3465

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL8G36C16U4W.M8FE1 8GB

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Corsair CMD16GX4M4B2133C10 4GB

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Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-3333C16-4GRRD 4GB

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Apacer Technology 78.01GA0.9K5 1GB

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Micron Technology 4ATF51264AZ-2G3B1 4GB

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A-DATA Technology DDR3 1600 4GB

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Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

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Samsung M471B5273CH0-CH9 4GB

Samsung M378A1K43BB2-CTD 8GB

Samsung M378A1K43BB2-CTD 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

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Corsair CMD64GX4M8A2800C16 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-4400C19-32GTZR 32GB

G Skill Intl F4-4400C19-32GTZR 32GB