TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-4000C18-8GVK 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

G Skill Intl F4-4000C18-8GVK 8GB

G Skill Intl F4-4000C18-8GVK 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.5

测试中的平均数值

G Skill Intl F4-4000C18-8GVK 8GB

需要考虑的原因
G Skill Intl F4-4000C18-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 53

左右 -66% 更低的延时
更快的写入速度，GB/s

15.2 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-4000C18-8GVK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 32
读取速度，GB/s

3,726.4 17.5
写入速度，GB/s

1,590.1 15.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3469

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C16-8GTZRA 8GB

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Samsung M471B5273CH0-CH9 4GB

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A-DATA Technology DDR3 1600 4GB

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Crucial Technology CT102464BF160B-16F 8GB

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Golden Empire CL16-16-16 D4-3000 4GB

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Crucial Technology BLS8G4D240FSE.16FBR2 8GB

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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Kllisre 0000 8GB

Kllisre 0000 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Samsung M378A5244BB0-CRC 4GB

Samsung M378A5244BB0-CRC 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-3300C16-4GRKD 4GB

G Skill Intl F4-3300C16-4GRKD 4GB