TwinMOS 8DPT5MK8-TATP 2GB vs G Skill Intl F4-4800C19-8GTZRC 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

G Skill Intl F4-4800C19-8GTZRC 8GB

G Skill Intl F4-4800C19-8GTZRC 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 18

测试中的平均数值

G Skill Intl F4-4800C19-8GTZRC 8GB

需要考虑的原因
G Skill Intl F4-4800C19-8GTZRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 53

左右 -96% 更低的延时
更快的写入速度，GB/s

15.0 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-4800C19-8GTZRC 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 27
读取速度，GB/s

3,726.4 18.0
写入速度，GB/s

1,590.1 15.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD AE34G1601U1 4GB

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Kingston KHX3600C17D4/16GX 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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AMD R744G2606U1S 4GB

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AMD R5S38G1601U2S 8GB

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AMD R5316G1609U2K 8GB

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AMD AE34G1601U1 4GB

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Samsung M471B5273EB0-CK0 4GB

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Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200

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Mushkin MRA4S266GHHF32G 32GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Corsair CMK16GX4M2D2666C16 8GB

Corsair CMK16GX4M2D2666C16 8GB