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TwinMOS 8DPT5MK8-TATP 2GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

TwinMOS 8DPT5MK8-TATP 2GB vs Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.7
    测试中的平均数值
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 53
    左右 -104% 更低的延时
  • 更快的写入速度，GB/s
    16.8 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 26
  • 读取速度，GB/s
    3,726.4 left arrow 18.7
  • 写入速度，GB/s
    1,590.1 left arrow 16.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    522 left arrow 3937

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Gold Key Technology Co Ltd NMUD416E86-3200D 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KGTWW1-MIE 4GB
Kingston KGTWW1-MIE 4GB
内存RAM
Kingston 9905474-052.A00LF 2GB
Kingston 9905474-052.A00LF 2GB
Kingston HP26D4U9S8ME-8 8GB
Kingston HP26D4U9S8ME-8 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX4000C19D4/8GX 8GB
Kingston KHX4000C19D4/8GX 8GB
内存RAM
Kingston 99U5403-492.A00LF 8GB
Kingston 99U5403-492.A00LF 8GB
Essencore Limited KD4AGU880-36A180U 16GB
Essencore Limited KD4AGU880-36A180U 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
Micron Technology 16ATF2G64AZ-3G2J1 16GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Apacer Technology GD2.1129WH.001 16GB
Apacer Technology GD2.1129WH.001 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Corsair CM4X4GF2400C16K4 4GB
Corsair CM4X4GF2400C16K4 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMW16GX4M2Z2933C16 8GB
Corsair CMW16GX4M2Z2933C16 8GB
内存RAM
Kingston MSI16D3LS1KFG/8G 8GB
Kingston MSI16D3LS1KFG/8G 8GB
Kingston MSI16D3LS1KFG/4G 4GB
Kingston MSI16D3LS1KFG/4G 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) PSD48G24002 8GB
Patriot Memory (PDP Systems) PSD48G24002 8GB
内存RAM