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TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

TwinMOS 8DPT5MK8-TATP 2GB vs Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.5
    测试中的平均数值
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 53
    左右 -104% 更低的延时
  • 更快的写入速度，GB/s
    10.2 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 26
  • 读取速度，GB/s
    3,726.4 left arrow 15.5
  • 写入速度，GB/s
    1,590.1 left arrow 10.2
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    522 left arrow 2486

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
内存RAM
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Samsung M393B1G70QH0-YK0 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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A-DATA Technology ADOVE1A0834E 1GB
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内存RAM