TwinMOS 8DPT5MK8-TATP 2GB vs Kingmax Semiconductor GLNH23F-18---------- 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Kingmax Semiconductor GLNH23F-18---------- 16GB

Kingmax Semiconductor GLNH23F-18---------- 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

低于PassMark测试中的延时，ns

53 67

左右 21% 更低的延时
更快的读取速度，GB/s

3 16

测试中的平均数值

Kingmax Semiconductor GLNH23F-18---------- 16GB

需要考虑的原因
Kingmax Semiconductor GLNH23F-18---------- 16GB

报告一个错误

更快的写入速度，GB/s

8.5 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Kingmax Semiconductor GLNH23F-18---------- 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 67
读取速度，GB/s

3,726.4 16.0
写入速度，GB/s

1,590.1 8.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 2030

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMZ16GX3M2A1866C9 8GB

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Corsair CMD32GX4M4A2666C15 8GB

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G Skill Intl F4-2400C16-4GFX 4GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Corsair CMWX16GC3600C18W2D 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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G Skill Intl F4-4000C19-16GTZSW 16GB