TwinMOS 8DPT5MK8-TATP 2GB vs Kingston 9932291-002.A00G 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Kingston 9932291-002.A00G 4GB

Kingston 9932291-002.A00G 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值

Kingston 9932291-002.A00G 4GB

需要考虑的原因
Kingston 9932291-002.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 53

左右 -130% 更低的延时
更快的写入速度，GB/s

8.8 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Kingston 9932291-002.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 23
读取速度，GB/s

3,726.4 15.5
写入速度，GB/s

1,590.1 8.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 2252

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CM4B16G7L2666A16K2-O 16GB

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Corsair CMD8GX3M2A2933C12 4GB

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Corsair CM4X8GE2666C16K8 8GB

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Samsung M471B5673FH0-CF8 2GB

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OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB