TwinMOS 8DPT5MK8-TATP 2GB vs Kingston HP24D4U7S8MD-8 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Kingston HP24D4U7S8MD-8 8GB

Kingston HP24D4U7S8MD-8 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 14.2

测试中的平均数值

Kingston HP24D4U7S8MD-8 8GB

需要考虑的原因
Kingston HP24D4U7S8MD-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 53

左右 -77% 更低的延时
更快的写入速度，GB/s

9.7 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Kingston HP24D4U7S8MD-8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 30
读取速度，GB/s

3,726.4 14.2
写入速度，GB/s

1,590.1 9.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 2402

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 39P5429-006.AO01 2GB

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Samsung M471B5173QH0-YK0 4GB

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G Skill Intl F4-2666C19-8GVK 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

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Kingston KHX2400C14/16G 16GB

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Corsair CMD16GX4M4C3200C16 4GB

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A-DATA Technology AO1P24HC8T1-BQXS 8GB

A-DATA Technology AO1P24HC8T1-BQXS 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-4266C17-16GVKB 16GB

G Skill Intl F4-4266C17-16GVKB 16GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Samsung M393B5170FH0-CK0 4GB

Corsair CMSX64GX4M4A2400C16 16GB

Corsair CMSX64GX4M4A2400C16 16GB