TwinMOS 8DPT5MK8-TATP 2GB vs Kingston HP37D4U1S8ME-8X 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Kingston HP37D4U1S8ME-8X 8GB

Kingston HP37D4U1S8ME-8X 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 18.6

测试中的平均数值

Kingston HP37D4U1S8ME-8X 8GB

需要考虑的原因
Kingston HP37D4U1S8ME-8X 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 53

左右 -51% 更低的延时
更快的写入速度，GB/s

15.0 1,590.1

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Kingston HP37D4U1S8ME-8X 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 35
读取速度，GB/s

3,726.4 18.6
写入速度，GB/s

1,590.1 15.0
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

522 3292

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4DFS8213.C8FHP 4GB

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Kingston KVR533D2N4 512MB

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G Skill Intl F4-3200C16-8GVS 8GB

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Nanya Technology M2X4G64CB88CHN-DG 4GB

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Crucial Technology BLE8G4D30AEEA.K16FD 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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V-GEN D4R8GL24A8R 8GB

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Corsair CMK64GX4M8A2666C16 8GB

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Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMD16GX4M4B2400C10 4GB

Corsair CMD16GX4M4B2400C10 4GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-3333C16-8GTZKW 8GB

G Skill Intl F4-3333C16-8GTZKW 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-3200C15-16GVR 16GB

G Skill Intl F4-3200C15-16GVR 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB