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TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
比较
TwinMOS 8DPT5MK8-TATP 2GB vs Micron Technology 18ASF2G72PZ-2G3B1 16GB
总分
TwinMOS 8DPT5MK8-TATP 2GB
总分
Micron Technology 18ASF2G72PZ-2G3B1 16GB
差异
规格
评论
差异
需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
更快的读取速度,GB/s
3
10.2
测试中的平均数值
需要考虑的原因
Micron Technology 18ASF2G72PZ-2G3B1 16GB
报告一个错误
低于PassMark测试中的延时,ns
50
53
左右 -6% 更低的延时
更快的写入速度,GB/s
7.3
1,590.1
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
53
50
读取速度,GB/s
3,726.4
10.2
写入速度,GB/s
1,590.1
7.3
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
522
2248
TwinMOS 8DPT5MK8-TATP 2GB RAM的比较
Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB RAM的比较
G Skill Intl F3-1866C8-8GTX 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965525-018.A00LF 4GB
Apacer Technology 78.C1GQB.4032B 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Essencore Limited KD48GU481-26N1600 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
SK Hynix HMT351S6CFR8C-PB 4GB
Crucial Technology CT4G4DFS8213.C8FAR 4GB
Samsung M393B2G70BH0-YK0 16GB
G Skill Intl F4-3200C16-16GTZA 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Kingston ACR16D3LS1NGG/2G 2GB
G Skill Intl F4-3600C19-8GSXK 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston 99U5712-002.A00G 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Mushkin MRX4U300GJJM16G 16GB
Samsung M393B2G70BH0-YK0 16GB
Corsair CMK16GX4M2B4266C19 8GB
Kingston KHX1866C9D3/8GX 8GB
Micron Technology 9ASF51272PZ-2G1A2 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMU32GX4M4C3000C15 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M471A1A43CB1-CRC 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
报告一个错误
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Bug description
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