TwinMOS 8DPT5MK8-TATP 2GB vs Micron Technology 8ATF1G64AZ-2G6B1 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Micron Technology 8ATF1G64AZ-2G6B1 8GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 19.1

测试中的平均数值

Micron Technology 8ATF1G64AZ-2G6B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G6B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 53

左右 -152% 更低的延时
更快的写入速度，GB/s

14.5 1,590.1

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 8ATF1G64AZ-2G6B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 21
读取速度，GB/s

3,726.4 19.1
写入速度，GB/s

1,590.1 14.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

522 3427

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4133C17-8GTZR 8GB

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Kingston 99U5428-063.A00LF 8GB

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Micron Technology 8ATF1G64HZ-3G2E1 8GB

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Samsung M393B5170FH0-CK0 4GB

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Kingston 9905700-025.A00G 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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G Skill Intl F4-4000C19-16GTRG 16GB

G Skill Intl F4-4000C19-16GTRG 16GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Corsair CMSX64GX4M4A2666C18 16GB

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Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

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Kingston 9905701-132.A00G 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Patriot Memory (PDP Systems) PSD44G240081 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Samsung M393A4K40BB1-CRC 32GB

Samsung M393A4K40BB1-CRC 32GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

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Kingston HP32D4U2S1ME-8 8GB

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB