TwinMOS 8DPT5MK8-TATP 2GB vs OCMEMORY OCM2933CL16-16GBH 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

OCMEMORY OCM2933CL16-16GBH 16GB

OCMEMORY OCM2933CL16-16GBH 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

低于PassMark测试中的延时，ns

53 59

左右 10% 更低的延时
更快的读取速度，GB/s

3 20.1

测试中的平均数值

OCMEMORY OCM2933CL16-16GBH 16GB

需要考虑的原因
OCMEMORY OCM2933CL16-16GBH 16GB

报告一个错误

更快的写入速度，GB/s

10.6 1,590.1

测试中的平均数值
更高的内存带宽，mbps

23400 6400

左右 3.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

OCMEMORY OCM2933CL16-16GBH 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 59
读取速度，GB/s

3,726.4 20.1
写入速度，GB/s

1,590.1 10.6
内存带宽，mbps

6400 23400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-23400, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

522 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M471A5244BB0-CRC 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Apacer Technology 78.C1GM3.C7Z0B 8GB

Apacer Technology 78.C1GM3.C7Z0B 8GB

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Kingston 9905403-061.A00LF 2GB

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Corsair CMR64GX4M4A2666C16 16GB

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Kingston 99U5723-002.A00G 8GB

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Kingston 99P5723-006.A00G 8GB