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TwinMOS 8DPT5MK8-TATP 2GB
Samsung M471A5244CB0-CWE 4GB

TwinMOS 8DPT5MK8-TATP 2GB vs Samsung M471A5244CB0-CWE 4GB

总分
star star star star star
TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

差异 规格 评论

差异

TwinMOS 8DPT5MK8-TATP 2GB 需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.5
    测试中的平均数值
Samsung M471A5244CB0-CWE 4GB 需要考虑的原因
Samsung M471A5244CB0-CWE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 53
    左右 -39% 更低的延时
  • 更快的写入速度，GB/s
    12.0 left arrow 1,590.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M471A5244CB0-CWE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    53 left arrow 38
  • 读取速度，GB/s
    3,726.4 left arrow 15.5
  • 写入速度，GB/s
    1,590.1 left arrow 12.0
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    522 left arrow 2283

TwinMOS 8DPT5MK8-TATP 2GB RAM的比较

Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB

Samsung M471A5244CB0-CWE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Kingston 99U5700-010.A00G 8GB
Kingston 99U5700-010.A00G 8GB
内存RAM
Ramaxel Technology RMN1740HC48D8F667A 2GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
G Skill Intl F4-4000C18-16GTZN 16GB
G Skill Intl F4-4000C18-16GTZN 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9905702-002.A00G 8GB
Kingston 9905702-002.A00G 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston KWTHG4-MIE 16GB
Kingston KWTHG4-MIE 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
King Tiger Technology Tigo-2400MHz-8G 8GB
King Tiger Technology Tigo-2400MHz-8G 8GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
G Skill Intl F4-3333C16-8GTZSW 8GB
G Skill Intl F4-3333C16-8GTZSW 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
Crucial Technology BLS8G4D240FSA.16FAR 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Corsair CMK128GX4M8B3333C16 16GB
Corsair CMK128GX4M8B3333C16 16GB
内存RAM