TwinMOS 8DPT5MK8-TATP 2GB vs SK Hynix HMA82GU6DJR8N-XN 16GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

SK Hynix HMA82GU6DJR8N-XN 16GB

SK Hynix HMA82GU6DJR8N-XN 16GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 15.7

测试中的平均数值

SK Hynix HMA82GU6DJR8N-XN 16GB

需要考虑的原因
SK Hynix HMA82GU6DJR8N-XN 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 53

左右 -66% 更低的延时
更快的写入速度，GB/s

13.2 1,590.1

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

SK Hynix HMA82GU6DJR8N-XN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 32
读取速度，GB/s

3,726.4 15.7
写入速度，GB/s

1,590.1 13.2
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

522 3247

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFS8266.M8FD 8GB

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Corsair CMX4GX3M2A1600C9 2GB

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Mushkin MR[A/B]4U300JJJM8G 8GB

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Samsung M471B5273EB0-CK0 4GB

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Corsair CM3X8GA2400C11Y2R 8GB

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SK Hynix HMT325S6CFR8C-H9 2GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Avant Technology J641GU42J5213ND 8GB

Avant Technology J641GU42J5213ND 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Samsung M393A4K40CB2-CTD 32GB

Samsung M393A4K40CB2-CTD 32GB

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Kingston 99U5474-010.A00LF 2GB

SK Hynix HMA81GS6DJR8N-VK 8GB

SK Hynix HMA81GS6DJR8N-VK 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMK32GX4M2D3600C16 16GB

Corsair CMK32GX4M2D3600C16 16GB