TwinMOS 8DPT5MK8-TATP 2GB vs Teikon TMA851U6AFR6N-UHHC 4GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Teikon TMA851U6AFR6N-UHHC 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 11.9

测试中的平均数值

Teikon TMA851U6AFR6N-UHHC 4GB

需要考虑的原因
Teikon TMA851U6AFR6N-UHHC 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 53

左右 -66% 更低的延时
更快的写入速度，GB/s

8.7 1,590.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Teikon TMA851U6AFR6N-UHHC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 32
读取速度，GB/s

3,726.4 11.9
写入速度，GB/s

1,590.1 8.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

522 1875

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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Teikon TMA851U6AFR6N-UHHC 4GB

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Corsair CMK32GX4M2Z4000C18 16GB

Corsair CMK32GX4M2Z4000C18 16GB

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Micron Technology 8JSF25664HZ-1G4D1 2GB

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Chun Well Technology Holding Limited CL16-20-20 D4-3000

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G Skill Intl F3-1866C8-8GTX 8GB

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G Skill Intl F4-3733C17-8GTZKK 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Micron Technology 16ATF1G64AZ-2G1A2 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Kingston 9905712-001.B00G 16GB

Kingston 9905712-001.B00G 16GB