TwinMOS 8DPT5MK8-TATP 2GB vs Terabyte Co Ltd RCX2-16G3600A 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Terabyte Co Ltd RCX2-16G3600A 8GB

Terabyte Co Ltd RCX2-16G3600A 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 13.2

测试中的平均数值

Terabyte Co Ltd RCX2-16G3600A 8GB

需要考虑的原因
Terabyte Co Ltd RCX2-16G3600A 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 53

左右 -104% 更低的延时
更快的写入速度，GB/s

14.4 1,590.1

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Terabyte Co Ltd RCX2-16G3600A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 26
读取速度，GB/s

3,726.4 13.2
写入速度，GB/s

1,590.1 14.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

522 3068

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M471B5173BH0-CK0 4GB

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UMAX Technology D4-2400-4GB-512X8-L 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CMR64GX4M8C3200C16 8GB

Corsair CMR64GX4M8C3200C16 8GB