TwinMOS 8DPT5MK8-TATP 2GB vs Transcend Information JM3200HLG-8G 8GB

总分

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

总分

Transcend Information JM3200HLG-8G 8GB

Transcend Information JM3200HLG-8G 8GB

差异规格评论

差异

TwinMOS 8DPT5MK8-TATP 2GB

需要考虑的原因
TwinMOS 8DPT5MK8-TATP 2GB

报告一个错误

更快的读取速度，GB/s

3 17.4

测试中的平均数值

Transcend Information JM3200HLG-8G 8GB

需要考虑的原因
Transcend Information JM3200HLG-8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 53

左右 -71% 更低的延时
更快的写入速度，GB/s

13.7 1,590.1

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

TwinMOS 8DPT5MK8-TATP 2GB

Transcend Information JM3200HLG-8G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

53 31
读取速度，GB/s

3,726.4 17.4
写入速度，GB/s

1,590.1 13.7
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

522 3208

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9905599-010.A00G 4GB

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Corsair CMK64GX4M4B3600C18 16GB

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Samsung M378A2K43DB1-CVF 16GB

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Samsung M393B1K70CH0-CH9 8GB

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Samsung M378A1G43EB1-CPB 8GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Corsair CMRX8GD3000C16R4D 8GB

Corsair CMRX8GD3000C16R4D 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Kingston KF3200C16D4/32GX 32GB

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A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

Apacer Technology 76.C102G.D170B 8GB

Apacer Technology 76.C102G.D170B 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston 9905663-012.A00G 16GB

Kingston 9905663-012.A00G 16GB