Unifosa Corporation HU564404EP0200 4GB vs Samsung M378A1K43DB2-CVF 8GB

总分

Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

总分

Samsung M378A1K43DB2-CVF 8GB

Samsung M378A1K43DB2-CVF 8GB

差异规格评论

差异

Unifosa Corporation HU564404EP0200 4GB

需要考虑的原因
Unifosa Corporation HU564404EP0200 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时

Samsung M378A1K43DB2-CVF 8GB

需要考虑的原因
Samsung M378A1K43DB2-CVF 8GB

报告一个错误

更快的读取速度，GB/s

15.2 14.1

测试中的平均数值
更快的写入速度，GB/s

11.8 9.5

测试中的平均数值
更高的内存带宽，mbps

23400 12800

左右 1.83 更高的带宽

规格

完整的技术规格清单

Unifosa Corporation HU564404EP0200 4GB

Samsung M378A1K43DB2-CVF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

14.1 15.2
写入速度，GB/s

9.5 11.8
内存带宽，mbps

12800 23400

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2354 2913

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 18ASF1G72PZ-2G1AV 8GB

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Samsung M378B5173BH0-CH9 4GB

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Corsair CM4X8GF2400C16S4 8GB

Corsair CM4X8GF2400C16S4 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Micron Technology AFSD416ES1P 16GB

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Kingston 9965525-018.A00LF 4GB

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Corsair CMK16GX4M2F4500C19 8GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Corsair CMK32GX4M2K4133C19 16GB

Corsair CMK32GX4M2K4133C19 16GB

Kingston KVR16N11/8-SP 8GB

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Galaxy Microsystems Ltd. GALAX OC LAB 8GB

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A-DATA Technology AD73I1B1672EG 2GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

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Kingston 9905624-004.A00G 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB

G Skill Intl F4-3200C16-8GTZSK 8GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Kingston 9905702-010.A00G 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

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G Skill Intl F4-4400C18-8GTZR 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16G