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Unifosa Corporation HU564404EP0200 4GB
Samsung M393A4K40BB1-CRC 32GB

Unifosa Corporation HU564404EP0200 4GB vs Samsung M393A4K40BB1-CRC 32GB

总分
star star star star star
Unifosa Corporation HU564404EP0200 4GB

Unifosa Corporation HU564404EP0200 4GB

总分
star star star star star
Samsung M393A4K40BB1-CRC 32GB

Samsung M393A4K40BB1-CRC 32GB

差异 规格 评论

差异

Unifosa Corporation HU564404EP0200 4GB 需要考虑的原因
Unifosa Corporation HU564404EP0200 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 51
    左右 49% 更低的延时
  • 更快的读取速度，GB/s
    14.1 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.5 left arrow 8.0
    测试中的平均数值
Samsung M393A4K40BB1-CRC 32GB 需要考虑的原因
Samsung M393A4K40BB1-CRC 32GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Unifosa Corporation HU564404EP0200 4GB
Samsung M393A4K40BB1-CRC 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 51
  • 读取速度，GB/s
    14.1 left arrow 10.6
  • 写入速度，GB/s
    9.5 left arrow 8.0
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2354 left arrow 2359

Unifosa Corporation HU564404EP0200 4GB RAM的比较

Kingston KF556C40-16 16GB
Apacer Technology 76.D105G.D090B 16GB

Samsung M393A4K40BB1-CRC 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Samsung M393A4K40BB1-CRC 32GB
Samsung M393A4K40BB1-CRC 32GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
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G Skill Intl F4-3200C14-16GVK 16GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
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内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
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SK Hynix HMA82GS6CJR8N-V-V 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
内存RAM
SK Hynix HMAA4GU6AJR8N-XN 32GB
SK Hynix HMAA4GU6AJR8N-XN 32GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
SK Hynix HMAA4GS6CJR8N-XN 32GB
内存RAM
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AMD R538G1601U2S-UO 8GB
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Patriot Memory (PDP Systems) 3400 C16 Series 8GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
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UMAX Technology 16GB
内存RAM
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Crucial Technology BLT2G3D1608DT1TX0 2GB
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内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
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A-DATA Technology DDR4 2400 2OZ 8GB
内存RAM
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Micron Technology 18HTF12872AY-800F1 1GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
InnoDisk Corporation M4C0-AGS1TCSJ 16GB
内存RAM