Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Gloway International (HK) STK4U2400D17082C 8GB

总分

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

差异规格评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 74

左右 66% 更低的延时

Gloway International (HK) STK4U2400D17082C 8GB

需要考虑的原因
Gloway International (HK) STK4U2400D17082C 8GB

报告一个错误

更快的读取速度，GB/s

14.3 12.6

测试中的平均数值
更快的写入速度，GB/s

7.7 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Gloway International (HK) STK4U2400D17082C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 74
读取速度，GB/s

12.6 14.3
写入速度，GB/s

7.2 7.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2051 1779

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Crucial Technology BL8G32C16U4RL.M8FE 8GB

Crucial Technology BL8G32C16U4RL.M8FE 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston 99U5712-002.A00G 16GB

Kingston 99U5712-002.A00G 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

G Skill Intl F4-3200C16-16GTRS 16GB

G Skill Intl F4-3200C16-16GTRS 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

Crucial Technology BLS16G4D240FSC.16FBR 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-3200C16-16GTZA 16GB

G Skill Intl F4-3200C16-16GTZA 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Apacer Technology 76.D305G.D390B 16GB

Apacer Technology 76.D305G.D390B 16GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Kingston KHX3733C19D4/16GX 16GB

Kingston KHX3733C19D4/16GX 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9905713-001.A00G 4GB

Kingston 9905713-001.A00G 4GB