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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
比较
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Patriot Memory (PDP Systems) 2800 C18 Series 16GB
总分
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
总分
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
差异
规格
评论
差异
需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
25
31
左右 19% 更低的延时
需要考虑的原因
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
报告一个错误
更快的读取速度,GB/s
18
12.6
测试中的平均数值
更快的写入速度,GB/s
15.2
7.2
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
31
读取速度,GB/s
12.6
18.0
写入速度,GB/s
7.2
15.2
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2051
3040
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB RAM的比较
Team Group Inc. Xtreem-LV-2133 4GB
Kingston KHX1866C10S3L/8G 8GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M391B5673EH1-CH9 2GB
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SK Hynix HYMP31GF72CMP4D5Y5 8GB
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A-DATA Technology DDR2 800G 2GB
Kingston 9905743-043.A00G 16GB
Avant Technology F641GU67F9333G 8GB
Kingston KHX4000C19D4/8GX 8GB
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Corsair CMG64GX4M2D3600C18 32GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMK32GX4M4K3600C16 8GB
Samsung M471B5273CH0-CH9 4GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
报告一个错误
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