Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs Samsung M393A2G40DB0-CPB 16GB

总分

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分

Samsung M393A2G40DB0-CPB 16GB

Samsung M393A2G40DB0-CPB 16GB

差异规格评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 53

左右 53% 更低的延时
更快的读取速度，GB/s

12.6 10.3

测试中的平均数值

Samsung M393A2G40DB0-CPB 16GB

需要考虑的原因
Samsung M393A2G40DB0-CPB 16GB

报告一个错误

更快的写入速度，GB/s

8.1 7.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Samsung M393A2G40DB0-CPB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 53
读取速度，GB/s

12.6 10.3
写入速度，GB/s

7.2 8.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2051 2333

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Samsung M378A1K43EB2-CWE 8GB

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Samsung V-GeN D4S16GL26A8TL6 16GB