Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs V-Color Technology Inc. TD416G26D819-VC 16GB

总分

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

差异规格评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 66

左右 62% 更低的延时

V-Color Technology Inc. TD416G26D819-VC 16GB

需要考虑的原因
V-Color Technology Inc. TD416G26D819-VC 16GB

报告一个错误

更快的读取速度，GB/s

16.5 12.6

测试中的平均数值
更快的写入速度，GB/s

9.0 7.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

V-Color Technology Inc. TD416G26D819-VC 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 66
读取速度，GB/s

12.6 16.5
写入速度，GB/s

7.2 9.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2051 1934

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Apacer Technology AQD-D4U8GN26-SE 8GB

Apacer Technology AQD-D4U8GN26-SE 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB

A-DATA Technology AO2P26KC8T1-BPYS 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-4000C19-16GTZSW 16GB

G Skill Intl F4-4000C19-16GTZSW 16GB

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Micron Technology 8ATF1G64HZ-2G3B1 8GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Samsung M378A1G43TB1-CTD 8GB

Samsung M378A1G43TB1-CTD 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology CT16G4SFD824A.C16FE 16GB

Crucial Technology CT16G4SFD824A.C16FE 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Crucial Technology BLM8G40C18U4B.M8FE1 8GB