Wilk Elektronik S.A. GY1866D364L9A/4G 4GB vs V-GEN D4M8GL26A8TS6 8GB

总分

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

总分

V-GEN D4M8GL26A8TS6 8GB

V-GEN D4M8GL26A8TS6 8GB

差异规格评论

差异

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

需要考虑的原因
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 63

左右 60% 更低的延时

V-GEN D4M8GL26A8TS6 8GB

需要考虑的原因
V-GEN D4M8GL26A8TS6 8GB

报告一个错误

更快的读取速度，GB/s

17 12.6

测试中的平均数值
更快的写入速度，GB/s

8.8 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

V-GEN D4M8GL26A8TS6 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 63
读取速度，GB/s

12.6 17.0
写入速度，GB/s

7.2 8.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2051 2061

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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Samsung M395T5160QZ4-CE66 2GB

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Avant Technology F641GU67F9333G 8GB

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Panram International Corporation PUD43000C164G2NJK 4GB

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A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology BLS4G4D240FSC.8FBR2 4GB

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Kingston 9905403-090.A01LF 4GB

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Mushkin MRA4S266GHHF32G 32GB

Mushkin MRA4S266GHHF32G 32GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

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Kingston 99U5471-056.A00LF 8GB

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Patriot Memory (PDP Systems) PSD44G240041 4GB

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