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G Skill Intl F4-4000C14-16GTZR 16GB
Samsung M471A1K43DB1-CWE 8GB
Compare
G Skill Intl F4-4000C14-16GTZR 16GB vs Samsung M471A1K43DB1-CWE 8GB
Overall score
G Skill Intl F4-4000C14-16GTZR 16GB
Overall score
Samsung M471A1K43DB1-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F4-4000C14-16GTZR 16GB
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Below the latency in the PassMark tests, ns
29
33
Around 12% lower latency
Faster reading speed, GB/s
24
16.1
Average value in the tests
Faster write speed, GB/s
20.0
13.0
Average value in the tests
Reasons to consider
Samsung M471A1K43DB1-CWE 8GB
Report a bug
Higher memory bandwidth, mbps
25600
17000
Around 1.51 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F4-4000C14-16GTZR 16GB
Samsung M471A1K43DB1-CWE 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
29
33
Read speed, GB/s
24.0
16.1
Write speed, GB/s
20.0
13.0
Memory bandwidth, mbps
17000
25600
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
4156
2987
G Skill Intl F4-4000C14-16GTZR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Samsung M471A1K43DB1-CWE 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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