RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Compare
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Overall score
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Overall score
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
38
Around 29% lower latency
Faster reading speed, GB/s
16.7
15.3
Average value in the tests
Faster write speed, GB/s
11.8
10.5
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Report a bug
Specifications
Complete list of technical specifications
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
27
38
Read speed, GB/s
16.7
15.3
Write speed, GB/s
11.8
10.5
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2756
2346
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM comparisons
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston MSI32D4S2S1ME-8 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M378A2K43BB1-CPB 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Kingston 9905403-174.A00LF 2GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Panram International Corporation PUD42400C154GNJW 4GB
Samsung M386B4G70DM0-CMA4 32GB
Apacer Technology 78.CAGP7.DFW0C 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-3200C16-4GVK 4GB
Kingston 99U5474-022.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
Corsair CMZ16GX3M2A2400C10 8GB
Kingston KHX4133C19D4/8GX 8GB
Asgard VMA45UG-MEC1U2AW2 8GB
Asgard VMA45UG-MEC1U2BQ2 8GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMK8GX4M2B3866C18 4GB
Report a bug
×
Bug description
Source link