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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Overall score
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
35
Around -13% lower latency
Faster reading speed, GB/s
15.7
9.8
Average value in the tests
Faster write speed, GB/s
13.3
7.9
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Chun Well Technology Holding Limited MD4U1632161DCW 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
35
31
Read speed, GB/s
9.8
15.7
Write speed, GB/s
7.9
13.3
Memory bandwidth, mbps
17000
21300
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2126
3318
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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