RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
66
Around 56% lower latency
Faster write speed, GB/s
9.0
7.3
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Report a bug
Faster reading speed, GB/s
14.7
13.4
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
66
Read speed, GB/s
13.4
14.7
Write speed, GB/s
9.0
7.3
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2423
1699
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMK16GX4M2K4266C19 8GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
SK Hynix HMA451U7AFR8N-TF 4GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3600C19-8GTZRB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK16GX4M2E3200C16 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Samsung M378A1K43EB2-CWE 8GB
SK Hynix HMT351R7EFR8C-RD 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
Kingston 9965433-034.A00LF 4GB
SK Hynix HMAA2GU6CJR8N-XN 16GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Samsung M393B2G70BH0-CK0 16GB
SK Hynix HMAA4GU6MJR8N-VK 32GB
AMD R538G1601U2S-UO 8GB
Kingston HP26D4U9S8ME-8 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 99U5702-101.A00G 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Panram International Corporation PUD42400C154G4NJK 4GB
Report a bug
×
Bug description
Source link