Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
AMD R334G1339U2S 4GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB vs AMD R334G1339U2S 4GB

Overall score
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Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Overall score
star star star star star
AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

Differences

  • Below the latency in the PassMark tests, ns
    28 left arrow 29
    Around 3% lower latency
  • Faster reading speed, GB/s
    10.5 left arrow 9
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 4.8
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
AMD R334G1339U2S 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    28 left arrow 29
  • Read speed, GB/s
    10.5 left arrow 9.0
  • Write speed, GB/s
    8.4 left arrow 4.8
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    1570 left arrow 1726
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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