Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Corsair CMZ8GX3M2A1600C9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB vs Corsair CMZ8GX3M2A1600C9 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

Overall score
star star star star star
Corsair CMZ8GX3M2A1600C9 4GB

Corsair CMZ8GX3M2A1600C9 4GB

Differences

  • Below the latency in the PassMark tests, ns
    27 left arrow 39
    Around 31% lower latency
  • Faster write speed, GB/s
    8.9 left arrow 8.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21% higher bandwidth
  • Faster reading speed, GB/s
    14.4 left arrow 13.2
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Corsair CMZ8GX3M2A1600C9 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    27 left arrow 39
  • Read speed, GB/s
    13.2 left arrow 14.4
  • Write speed, GB/s
    8.9 left arrow 8.8
  • Memory bandwidth, mbps
    12800 left arrow 10600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2245 left arrow 2340
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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